parameter max. units i d @ t c = 25c continuous drain current, v gs @ 4.5v 48 i d @ t c = 100c continuous drain current, v gs @ 4.5v 30 a i dm pulsed drain current ? 190 p d @t c = 25c power dissipation 69 w linear derating factor 0.56 w/c v gs gate-to-source voltage 10 v v gsm gate-to-source voltage 14 v (start up transient, tp = 100s) e as single pulse avalanche energy ? 270 mj i ar avalanche current ? 29 a e ar repetitive avalanche energy ? 6.9 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) 11/18/97 IRL3202 preliminary hexfet ? power mosfet pd 9.1695a these hexfet power mosfets were designed specifically to meet the demands of cpu core dc-dc converters in the pc environment. advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to- 220 contribute to its wide acceptance throughout the industry. s d g absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.8 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 20v r ds(on) = 0.016 w i d = 48a to-220ab description l advanced process technology l optimized for 4.5v-7.0v gate drive l ideal for cpu core dc-dc converters l fast switching
IRL3202 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.029 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.019 v gs = 4.5v, i d = 29a ? CCC CCC 0.016 w v gs = 7.0v, i d = 29a ? v gs(th) gate threshold voltage 0.70 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 28 CCC CCC s v ds = 16v, i d = 29a CCC CCC 25 a v ds = 20v, v gs = 0v CCC CCC 250 v ds = 10v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 10v gate-to-source reverse leakage CCC CCC -100 v gs = -10v q g total gate charge CCC CCC 43 i d = 29a q gs gate-to-source charge CCC CCC 12 nc v ds = 16v q gd gate-to-drain ("miller") charge CCC CCC 13 v gs = 4.5v, see fig. 6 ? t d(on) turn-on delay time CCC 9.8 CCC v dd = 10v t r rise time CCC 100 CCC ns i d = 29a t d(off) turn-off delay time CCC 63 CCC r g = 9.5 w , v gs = 4.5v t f fall time CCC 82 CCC r d = 0.3 w , ? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 2000 CCC v gs = 0v c oss output capacitance CCC 800 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 290 CCC ? = 1.0mhz, see fig. 5 s d g ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 29a, di/dt 63a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 0.64mh r g = 25 w , i as = 29a. ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 29a, v gs = 0v ? t rr reverse recovery time CCC 68 100 ns t j = 25c, i f = 29a q rr reverse recovery charge CCC 130 190 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 48 190 a electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss nh l s internal source inductance CCC 7.5 CCC l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current
IRL3202 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.75v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 48a 1 10 100 1000 2 3 4 5 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.75v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v bottom bottom
IRL3202 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 3500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 10 20 30 40 50 60 70 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 29a v = 16v ds 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRL3202 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 18a 29a
IRL3202 fig 12. on-resistance vs. drain current fig 13. on-resistance vs. gate voltage 0 10 20 30 40 50 60 0.010 0.012 0.014 0.016 0.018 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 4.5v vgs = 7.0v ( w ) 0.010 0.015 0.020 0.025 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source volta g e ( v ) i = 48a d r ds(on), drain-to-source on resistance ( w )
IRL3202 lead assignments 1 - g a te 2 - dr a in 3 - source 4 - dr a in - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 c o n tr o lling d im e n s io n : inc h 4 h e a ts in k & le a d m e a s u r e m e n t s d o n ot include burrs. part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo go example : this is an irf1010 w ith assembly lo t c o de 9b1m assembly lo t co d e date code (yyw w ) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/97
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